Fraunhofer Center for Silicon Photovoltaics CSP
Fraunhofer Center for Silicon Photovoltaics CSP
© Fraunhofer CSP
Im Projekt »IP-Schutz« sollen neue präparative Verfahren und analytische Techniken für die hochauflösende Material- und Dünnschichtcharakterisierung entwickelt werden.

© Fraunhofer CSP

IP Protection

IP Protection through High-Resolution PV Analytics

Fraunhofer CSP supports manufacturers in the photovoltaic industry in protecting their intellectual property through high-resolution material analysis methods. Using nanoanalytics, precise layer characterization, and the investigation of structural and component features, patent‑critical properties can be clearly identified and documented in a legally robust manner. These methods enable both the detection of unauthorized process or material modifications and the preparation of substantiated expert reports for assessing potential patent infringements. This provides our clients with a scientifically and legally sound basis for safeguarding technological innovations.

Services

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Reference Projects

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Application Examples

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Services

Series of images showing the PV module preparation process with a commercial PV module, removal of the backsheet, exposed solar cell, and optical and SEM images of a removed cell fragment
© Fraunhofer CSP
Preparation steps for a PV module: from the intact module to removing the backsheet and exposing the solar cell to optical and SEM analysis of extracted cell fragments.

Damage-minimized preparation of solar cells from commercial PV modules

  • Adapted preparation techniques for commercial PV products
  • Damage-reducing sample preparation from PV modules for high-resolution analysis
  • Ensuring the legal usability of the analysis results
STEM-EDX layer analysis with HAADF image and element maps for Si, N, O, Al, and P; representation of two layers with intermediate layers and local phosphorus enrichments
© Fraunhofer CSP
High-resolution STEM-EDX analysis of a layer stack: representation of layer 1 and layer 2 with intermediate layers and element distributions for Si, N, O, Al, and local P enrichments.

Identification of structural and component features across all length scales (meter to nanometer)

  • High-resolution analysis of layer stacks, e.g., c-Si layer 1 (L1), layer 2 (L2), IL1, IL2, local P enrichments
  • Nanoanalytics for identifying and evaluating structural and component characteristics
  • Testing for patent infringement or defense against patent litigation
  • Preparation of legally compliant expert reports to protect the client’s intellectual property (IP)

Reference Projects

 

© Fraunhofer CSP

IP Protection

See Project Website

Application Examples

Patent assessment through nanoanalytics

Commercial PV modules are analyzed down to the nanoscale layer level (e.g., c-Si layers, interlayers, doping profiles). The results serve as a technically robust basis for patent examinations and IP disputes.

 

Legally robust expert reports for PV products

Damage-minimized preparation and high-resolution nanoanalytics enable informative expert reports on layer structures, material properties, and manufacturing processes—suitable for demonstrating or defending against patent infringement.

Identification of unauthorized process or material changes

Through the analysis of local phosphorus enrichments, diffusion profiles, or layer modifications, unauthorized changes in production processes can be reliably identified.